Infineon Technologies Americas Corp.Download PDFPatent Trials and Appeals BoardAug 28, 202015389974 - (D) (P.T.A.B. Aug. 28, 2020) Copy Citation UNITED STATES PATENT AND TRADEMARK OFFICE UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O. Box 1450 Alexandria, Virginia 22313-1450 www.uspto.gov APPLICATION NO. FILING DATE FIRST NAMED INVENTOR ATTORNEY DOCKET NO. CONFIRMATION NO. 15/389,974 12/23/2016 Eung San Cho 1486-091US01/2016P51658US 4773 113771 7590 08/28/2020 Shumaker & Sieffert, P.A. Infineon Technologies AG 1625 Radio Drive Suite 100 Woodbury, MN 55125 EXAMINER GONDARENKO, NATALIA A ART UNIT PAPER NUMBER 2891 NOTIFICATION DATE DELIVERY MODE 08/28/2020 ELECTRONIC Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the following e-mail address(es): pairdocketing@ssiplaw.com PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE BEFORE THE PATENT TRIAL AND APPEAL BOARD Ex parte EUNG SAN CHO Appeal 2019-006198 Application 15/389,974 Technology Center 2800 Before JEFFREY B. ROBERTSON, JAMES C. HOUSEL, and CHRISTOPHER C. KENNEDY, Administrative Patent Judges. ROBERTSON, Administrative Patent Judge. DECISION ON APPEAL1 STATEMENT OF THE CASE Pursuant to 35 U.S.C. § 134(a), Appellant2 appeals from the Examiner’s decision to reject claims 1–4, 6, 7, 9, and 11–17. Appeal Br. 8. We have jurisdiction under 35 U.S.C. § 6(b). 1 This Decision includes citations to the following documents: Specification filed December 23, 2016 (“Spec.”); Non-Final Office Action mailed August 30, 2018 (“Non-Final Act.”); Appeal Brief filed April 30, 2019 (“Appeal Br.”); Examiner’s Answer mailed June 25, 2019 (“Ans.”); and Reply Brief filed August 21, 2019 (“Reply Br.”). 2 We use the word Appellant to refer to “applicant” as defined in 37 C.F.R. § 1.42(a). Appellant identifies the real party in interest as Infineon Appeal 2019-006198 Application 15/389,974 2 We affirm. CLAIMED SUBJECT MATTER Appellant states the invention relates to a common contact semiconductor device package. Spec. ¶ 2. The Specification explains that the phrase “common contact” conveys that at least two devices of the same type are coupled to a portion of a semiconductor device package in the same orientation such that like contacts on a first side of the devices are coupled to the portion of the semiconductor device package and like contacts on a second side of the devices extend exposed and are aligned in a particular orientation. Id. Claim 1, reproduced below, is illustrative of the claimed subject matter (Appeal Br., Claims Appendix 21): 1. A semiconductor device package comprising: a conductive clip that includes a recess and that is configured to mount to a substrate along a first surface and a second surface that bound the recess, wherein the first surface and the second surface are aligned with a long axis of the conductive clip; and at least two vertical transistors including a first transistor and a second transistor that are of a same type and structural configuration, and that are mounted within the recess along a continuous surface and in a same orientation such that a drain or source contact is electrically coupled to the conductive clip along the continuous surface, and such that: a gate contact and a source or drain contact extend exposed within the recess and along the same long axis of the conductive clip; the exposed source or drain contact of the first transistor is configured to electrically couple to a first switch node trace of a first half-bridge circuit of a multi-phase circuit on the substrate, Technologies Americas Corp., which is a subsidiary of Infineon Technologies AG. Appeal Br. 3. Appeal 2019-006198 Application 15/389,974 3 and the exposed source or drain contact of the second transistor is configured to electrically couple to a second switch node trace of a second half-bridge circuit of the multi-phase circuit on the substrate, wherein the long axis of the conductive clip is configured to be perpendicular to a long axis of the first switch node trace and the second switch node trace, and wherein the first transistor and the second transistor are both configured to function as either high side transistors for the first half-bridge circuit and the second half-bridge circuit or as a low- side transistors for the first half-bridge circuit and the second half-bridge circuit. Claim 6 is also independent and recites a system including a first semiconductor package and a second semiconductor package each having conductive clips and transistors. Id. at 22–24. REFERENCES The prior art relied upon by the Examiner is: Name Reference Date Kusase et al. (hereinafter “Kusase”) US 5,543,703 August 6, 1996 Nishiura et al. (hereinafter “Nishiura”) US 6,114,826 September 5, 2000 Joshi US 6,489,678 B1 December 3, 2002 Standing US 6,677,669 B2 January 13, 2004 Lu et al. (hereinafter “Lu”) US 2011/0101511 A1 May 5, 2011 Li et al. (hereinafter “Li’458”) US 2015/0069458 A1 March 12, 2015 LI et al. (hereinafter “LI’324”) US 2016/0336324 A1 November 17, 2016 Appeal 2019-006198 Application 15/389,974 4 REJECTIONS 1. The Examiner rejected claims 1–4 under 35 U.S.C. § 103 as unpatentable over Standing and Kusase. Non-Final Act. 2–6. 2. The Examiner rejected claims 6 and 7 under 35 U.S.C. § 103 as unpatentable over Standing, Lu, and Kusase. Non-Final Act. 6–13. 3. The Examiner rejected claims 6, 7, and 9 under 35 U.S.C. § 103 as unpatentable over Joshi, Lu, and Kusase. Non-Final Act. 13–19. 4. The Examiner rejected claims 11–14, and 17 under 35 U.S.C. § 103 as unpatentable over Joshi, Lu, Kusase, and Nishiura. Non- Final Act. 19–21. 5. The Examiner rejected claims 15 and 16 under 35 U.S.C. § 103 as unpatentable over Joshi, Lu, Kusase, Li’458, and LI’324.3 Non- Final Act. 21–22. OPINION Rejection 1 Appellant does not present separate arguments with respect to claims 1–4 subject to Rejection 1. See Appeal Br. 13. We select claim 1 as representative for disposition of this rejection, with the patentability of the other claims standing or falling with claim 1. 37 C.F.R. § 41.37(c)(1)(iv). 3 Appellant and the Examiner refer to Li’458 as “Li” and LI’324 as “Li ‘324.” Appeal Br. 19; Non-Final Act. 21. Appeal 2019-006198 Application 15/389,974 5 The Examiner’s Rejection In rejecting claim 1 as obvious over Standing and Kusase, the Examiner found Standing discloses a semiconductor device package comprising a conductive clip having a recess including a first and second transistor with a gate contact and a source contact. Non-Final Act. 2–3. The Examiner found Standing does not disclose the exposed source or drain contact of the first transistor is configured to electrically couple to a first switch node trace of a first half-bridge circuit of a multi-phase circuit and the exposed source or drain contact of the second transistor is configured to electrically couple to a second switch node trace of a second half-bridge circuit of the multi-phase circuit, wherein the long axis of the conductive clip is configured to be perpendicular to a long axis of the first switch node trace and the second switch node trace. Id. at 3–4. The Examiner found Kusase discloses a three-phase semiconductor circuit having the connection arrangement between transistors switch node traces recited in claim 1. Id. at 4. The Examiner determined it would have been obvious to have modified the semiconductor device package of Standing by forming a three- phase semiconductor circuit comprising a half-bridge circuit as taught by Kusase using the conductive clip of Standing, where the conductive clip is configured to be perpendicular to a long axis of the first switch node trace and the second switch node trace also in order to, inter alia, “provide [a] common connector for three semiconductor devices to simplify an assembly with the circuit and to provide protection of the semiconductor devices against environmental elements.” Id. at 5, citing Standing, col. 1, ll. 8–31, col. 2, ll. 21–33, col. 4, ll. 30–33. Appeal 2019-006198 Application 15/389,974 6 Appellant’s Contentions Appellant argues Kusase does not disclose any physical structure between common drain and common source transistors, and that Figures 1 and 6 of Kusase are schematic diagrams disclosing electrical connections that may be implemented in a wide variety of possible structural arrangements. Appeal Br. 11–12. Therefore, Appellant argues the Examiner has not shown where the long axis of the conductive clip is configured to be perpendicular to a long axis of the first switch node trace and the second switch node trace as recited in claim 1. Id. at 12. Appellant argues the Examiner has not provided a sufficient reason to modify the disclosure of Standing with Kusase, because Standing already discloses an outer clip that serves as a housing and a common connector, such that one would not have a reason to modify Standing to provide protection against environmental elements or simplify an assembly. Id. Appellant contends modifying Standing in view of the teachings in Kusase would not arrive at a gate contact and a drain contact that extend exposed within the recess and along the same long axis of the conductive clip as required by the claims. Id. at 12–13. Issue The dispositive issue with respect to this rejection is: Did the Examiner err in determining the semiconductor device package having a conductive clip with the structural features recited in claim 1 would have been obvious over Standing and Kusase? Appeal 2019-006198 Application 15/389,974 7 Discussion We are not persuaded by Appellant’s arguments that Kusase fails to suggest configuring the long axis of the conductive clip disclosed in Standing to be perpendicular to a long axis of a first switch node trace and a second switch node trace as recited in claim 1. In responding to a prima facie case of obviousness, one cannot show nonobviousness by attacking references individually where the rejections are based on combinations of references. In re Keller, 642 F.2d 413, 426 (CCPA 1981); In re Merck & Co., Inc., 800 F.2d 1091, 1097 (Fed. Cir. 1986). Appellant fails to appreciate the Examiner’s rejection as to what the prior art as a whole would convey to one of ordinary skill in the art as further explained below. Although Appellant contends Kusase discloses only schematic diagrams of electrical connections, Appellant acknowledges that the plurality of electrical connections in Kusase “may be physically implemented with a wide possibility of possible structural arrangements.” Appeal Br. 11–12. Appellant acknowledges also that “[t]ransistors 19 may be stacked on different layers or arranged in any other manner to fit the needs of the application.” Reply Br. 6. The Examiner’s rationale is consistent with this understanding as it provides express reasoning why one of ordinary skill in the art would have applied a perpendicular arrangement for the switch node traces as recited in claim 1 out of other possible structural configurations, namely to minimize the length of the traces and occupy less space on the circuit board. Ans. 5, 7. Indeed, it appears that the clips disclosed in Standing, by virtue of the similarity in structure of the semiconductor device packages including transistors disclosed therein and those in the instant Specification, would be Appeal 2019-006198 Application 15/389,974 8 “configured to electrically couple” to first switch node trace and a second node trace as recited in claim 1 as well as being “configured to function” as high side transistors or low side transistors in a first half-bridge circuit and a second half-bridge circuit. Standing, col. 4, ll. 15–40, Figs. 5–6; Spec. Figs. 2–4. Thus, Appellant’s argument that one of ordinary skill in the art would not have interpreted the disclosure in Kusase to include arrangements where the long axis of the conductive clip disclosed in Standing is configured to be perpendicular to a long axis of a first switch node trace and a second switch node trace is not sufficient to demonstrate reversible error in the Examiner’s rationale. In this regard, Appellant’s argument that the Examiner is relying on an inherency theory with respect to the teachings of Kusase (Reply Br. 6), is misplaced. The Examiner does not rely on inherency, but provides reasoning as to why one of ordinary skill in the art would have selected the particular arrangement recited in claim 1 as discussed above. See Ans. 6. As to Appellant’s second argument that the Examiner has not provided sufficient reasoning to combine Standing and Kusase, we are of the view that Appellant unduly focuses on the individual teachings of each reference rather than the rejection as a whole. In particular Appellant’s contention that Standing already discloses outer clip 12 is useful as a housing such that it would not have been obvious to have combined Standing and Kusase to provide protection against environmental elements or to simplify an assembly as alleged by the Examiner (Appeal Br. 12) fails to appreciate the Examiner’s rejection. As explained by the Examiner, it is Standing’s disclosure that is relied upon for disclosing a compact package for use in the three-phase semiconductor circuit of Kusase, in order to Appeal 2019-006198 Application 15/389,974 9 provide for protection against environmental elements. Non-Final Act. 5; Ans. 7; Standing, col. 1, ll. 28–31; col. 2, ll. 21–32. The Examiner relies on Standing for the arrangement of the gate contact and drain contact within a recess and along the same long axis of the conductive clip. Non-Final Act. 3; Ans. 7; Standing, Figs. 5–6, col. 4, ll. 15–20, col. 3, ll. 5–10. The Examiner’s provided rationale for combining Standing and Kusase is not inconsistent with the overall disclosure in Kusase, which discloses a multi- phase semiconductor circuit with high side transistors (19a–19c) and low side transistors (19d–19f). Kusase, col. 4, ll. 44–60, Fig. 1. Kusase discloses the transistors (19a–19c) can be fabricated on one chip and the transistors (19d–19f) can be fabricated on one chip in an integrated half- bridge circuit. Kusase, col. 9, l. 65 – col. 10, l. 17. Thus, applying the compact packages of Standing when constructing a half-bridge circuit as in Kusase is consistent with the objective in Standing to simplify manufacturing. Standing, col. 1, ll. 25–31. Therefore, the Examiner has provided sufficient rationale for combining the co-packaged devices of Standing with the half-bridge circuits of Kusase in order to arrive at the semiconductor device package recited in claim 1. Accordingly, we affirm the Examiner’s rejection of claims 1–4 as obvious over Standing and Kusase. Rejection 2 Appellant does not present separate arguments with respect to claims 6 and 7 subject to Rejection 2. See Appeal Br. 15–16. We select claim 6 as representative for disposition of this rejection. 37 C.F.R. § 41.37(c)(1)(iv). Appeal 2019-006198 Application 15/389,974 10 The Examiner’s Rejection As discussed above, claim 6 recites a system including a first semiconductor package and a second semiconductor package each having conductive clips and transistors with similar structures as recited in claim 1. In rejecting claim 6 as obvious over Standing, Lu, and Kusase, the Examiner found Standing discloses a first semiconductor device package, making similar findings as discussed above with respect to claim 1. Non- Final Act. 7–8. The Examiner found Standing does not specifically disclose (1) a system comprising a first semiconductor package with a first transistor configured to function as a high side transistor and a second semiconductor package with the limitations recited in claim 6 including a second conductive clip having a second transistor configured to function as a low side transistor, and (2) where the first and second conductive clips are configured to be perpendicular to a long axis of each respective switch node trace. Id. at 8–9. Regarding (1), the Examiner found Lu discloses a package including high side FET and low side FET wherein the source contact of one of the two vertical channel transistors is electrically coupled to the conductive clip and the gate contact and the drain contact extend within the recess and along the same long axis of the conductive clip. Id. at 9. The Examiner determined it would have been obvious to have modified the package of Standing by forming a first conductive clip including high-side power transistors and a second conductive clip including low-side power transistors as disclosed in Lu in order to provide an improved power semiconductor package using conductive clips for mechanical protection of the semiconductor device having desired operational characteristics. Id. at 9–10, citing Lu ¶¶ 1, 6, 7. Appeal 2019-006198 Application 15/389,974 11 Regarding (2), the Examiner made similar findings with respect to Kusase as with respect to claim 1. Id. at 10–11, see Non-Final Act. 4. The Examiner determined it would have been obvious to have modified the semiconductor device package of Standing and Lu with Kusase to form a three-phase semiconductor half-bridge circuit as taught by Kusase using conductive clips of Standing/Lu thus arriving at the system of claim 6. Id. at 11–13. Appellant’s contentions Appellant sets forth similar arguments for claim 6 as set forth for claim 1 with respect to Standing and Kusase (Appeal Br. 14), which we found unpersuasive as discussed above. Appellant also contends that Lu discloses different transistors of different types mounted in different orientations rather than transistors of a same type and structural configuration, and as a result, one of ordinary skill in the art would not have applied the teachings of Lu to Standing to arrive at Appellant’s claims. Appeal Br 14–15. In addition, Appellant contends Lu does not disclose or suggest a gate contact and a source contact within a recess, and the source contact of Lu is not exposed nor aligned with a gate contact within the recess and along the same long axis of the first conductive clip. Id. at 15. Issue Did the Examiner err in determining the system recited in claim 6 would have been obvious over Standing, Lu, and Kusase? Appeal 2019-006198 Application 15/389,974 12 Discussion We are not persuaded by Appellant’s arguments. As to Appellant’s argument that Lu fails to disclose transistors of a same type and configuration, we agree with the Examiner that Appellant is incorrect. Ans. 9. Specifically, as the Examiner explains, Lu discloses two mounting surfaces (26, 28), where each mounting surface includes one or more transistors of a same type and structural configuration, e.g., one or more high side transistors on a first mounting surface (26). Id.; Lu ¶¶ 43, 44, Figs. 1–2. As to Appellant’s argument that Lu does not disclose or suggest a gate contact and a source contact extend exposed within a recess and along the same axis of the first conductive clip, we agree with the Examiner that the specific embodiment to which Appellant refers (Fig. 11 of Lu) including the additional die 285 does not have to be incorporated into the structure of the combined references. Ans. 10. It is well established that the obviousness inquiry does not ask “whether the references could be physically combined but whether the claimed inventions are rendered obvious by the teachings of the prior art as a whole.” In re Etter, 756 F.2d 852, 859 (Fed. Cir. 1985) (en banc); see also In re Keller, 642 F.2d at 425 (stating “[t]he test for obviousness is not whether the features of a secondary reference may be bodily incorporated into the structure of the primary reference”). That is, as the Examiner correctly explains, Standing and Lu are applied under an obviousness rationale, with the combination of Standing and Lu disclosing the recess arrangement recited in claim 6. Ans. 8, 10–11. In this regard, we are of the view that when the teachings of Standing, Kusase, and Lu are viewed as whole, one of ordinary skill in the art would have found it obvious to have applied a first clip having a gate contact and Appeal 2019-006198 Application 15/389,974 13 source contact exposed within a recess along the same long axis of the first conductive clip (see Kusase Fig. 1, 19d–19f), as suggested by the combination of Standing and Lu, and a second clip having a gate contact and drain contact exposed within a recess along the same long axis of the first conductive clip (see Kusase Fig. 1, 19a–19c) as suggested by the combination of Standing and Lu. Standing Figs. 5, 6; col. 4, ll. 15–40, Lu ¶¶ 42, 43; Figs. 2–5, 12–13. Accordingly, we affirm the Examiner’s rejection of claims 6 and 7 as obvious over Standing, Lu, and Kusase. Rejection 3 Appellant does not present separate arguments with respect to claims 6, 7, and 9 subject to Rejection 3. See Appeal Br. 18. We select claim 6 as representative for disposition of this rejection. 37 C.F.R. 41.37(c)(1)(iv). The Examiner’s Rejection In rejecting claim 6 as obvious over Joshi, Lu, and Kusase, the Examiner found Joshi discloses a system having a first semiconductor package with a first conductive clip (104, 104-1, 104-2) and a first plurality of transistors (dies 400-1, 400-24) with drain terminals on the back side of the MOSFET and source and gate terminals on the front side of the MOSFET. Non-Final Act. 13, citing Joshi, Figs. 4–6, col. 2, ll. 29–67, cols. 4 The Examiner appears to refer to dies 400-1 and 400-2 as “dies 404-1 and 404-2.” Non-Final Act. 13. As Joshi does not appear to disclose dies labeled 404-1 and 404-2, we understand that when the Examiner uses the number “404,” the Examiner is actually referring to dies “400.” See Joshi, Fig. 4; col. 4, l. 66 – col. 5, l. 2. Appeal 2019-006198 Application 15/389,974 14 4-5. The Examiner found Joshi discloses a first conductive clip including a recess formed by the lead frame regions 104-1 and 104-2 and wherein a first surface and second surface of a first conductive clip are aligned with a long axis of the first conductive clip. Id. The Examiner found Joshi discloses a first plurality of transistors including at least two vertical transistors that are of the same type and structural configuration, which are mounted within the recess of the first conductive clip in a same orientation such that a drain contact is electrically coupled to the first conductive clip. Id. at 13–14. The Examiner found Joshi discloses a top active surface of each die having a source terminal is co-planar with top surfaces of edges of the lead frame 104 and source terminals are on the top active surfaces of the dies, and solder balls are provided on top active surfaces of the dies such that a gate contact and a source contact are exposed within a recess and are along the same long axis of the first conductive clip. Id. at 14. The Examiner found that Joshi discloses a second semiconductor package that includes a second conductive clip, making similar findings with respect to lead frame 104 and regions 104-3 and 104-4 as well as dies 400-3 and 400-4. Id. at 14–15. The Examiner found Joshi does not specifically disclose (1) the second plurality of transistors is mounted such that a source contact is electrically coupled to the second conductive clip and such that a gate contact and a drain contact extend exposed within the recess, and (2) the arrangement of transistors, exposed source contacts of each transistor, and coupling arrangements between the transistors and switch node traces recited in claim 6. Id. at 15–16. Appeal 2019-006198 Application 15/389,974 15 Regarding (1), the Examiner made similar findings with respect to Lu as discussed above for Rejection 2. Id. at 16, see id. 9. The Examiner determined it would have been obvious to have modified the package of Joshi by forming first conductive clip including high-side power transistors and a second clip including low-side power transistors as taught by Lu to have a system comprising a second semiconductor package, wherein the second plurality of transistors is mounted such that a source contact is electrically coupled to the second conductive clip and such that a gate contact and a drain contact extend exposed within the recess in order to provide an improved semiconductor package using conductive clips for mechanical protection of the semiconductor device having desired characteristics. Id. at 16. Regarding (2), the Examiner made similar findings with respect to Kusase as discussed above with respect to Rejections 1 and 3. Id. at 16–18. The Examiner determined it would have been obvious to have modified the semiconductor device package of Joshi and Lu by forming a three-phase semiconductor circuit comprising a half-bridge circuit as taught by Kusase using the conductive clips of Joshi/Lu to arrive at the system recited in claim 6 in order to provide an integrated three-phase semiconductor circuit having excellent efficiency, wherein the power semiconductor transistors of a first plurality of power transistors and a second plurality of power transistors have improved breakdown characteristics. Id. at 18–19. Appellant’s contentions Appellant contends that Joshi fails to disclose a first conductive clip with a first plurality of transistors as recited in claim 6, because Joshi Appeal 2019-006198 Application 15/389,974 16 discloses each lead frame region 104-1, 104-2, 104-3, and 104-4 is an electrically isolated lead frame region with a single transistor. Appeal Br. 16. Appellant argues also that Joshi does not disclose a plurality of transistors mounted within a recess of a first conductive clip in a same orientation as required by claim 6. Id. at 16–17. Appellant also relies on similar arguments with respect to Lu and Kusase as discussed above with respect to Rejections 1 and 2, namely that Lu does not disclose at least two transistors of a same type and structural configuration that is configured to function as a high side transistor and Kusase does not disclose any physical structure between common drain and common source transistors in Figures 1 and 6. Id. at 17. Issue Did the Examiner err in determining the system recited in claim 6 would have been obvious over Joshi, Lu, and Kusase? Discussion We are not persuaded by Appellant’s arguments that Joshi fails to disclose a first plurality of transistors mounted within a recess of a first conductive clip. As the Examiner further explains in the Answer, Joshi teaches that the lead frame regions 104-1 and 104-2 form a first conductive clip with a first plurality of transistors, dies 400-1 and 400-2, which are mounted on a continuous surface in the form of base frame 100. Ans. 12. The Examiner explains that the Specification does not provide a clear definition of “continuous surface” such that base frame 100 in Joshi (see Joshi Fig. 1) is interpreted as a continuous surface. Id. In addition, the Appeal 2019-006198 Application 15/389,974 17 Examiner explained that the claim language “the first conductive clip includes a recess” does not exclude Joshi’s configuration having two regions and a recess within each region of the first conductive clip. Id. Appellant has not sufficiently addressed the Examiner’s rationale, which we find to be sufficiently supported by the record.5 That is, we agree with the Examiner that the Specification does not provide an express definition of “continuous surface,” nor does the Specification exclude situations where a recess may consist of two regions. Accordingly, we are not persuaded by Appellant’s argument. We are also not persuaded by Appellant’s contention that the multi- chip flip chip package of Joshi does not suggest a plurality of transistors mounted in a “same orientation” because gate terminals for Q1 and Q2 face each other and Q3 and Q4 face each other. Appeal Br. 16–17; Joshi Fig. 8. As the Examiner points out, claim 6 defines “same orientation” of the mounting arrangement of the transistors in the first conductive clip with respect to the drain contact of each transistor being electrically coupled to the first conductive clip and the gate contact and source contact “extend exposed within the recess and along the same long axis of the first conductive clip.” Ans. 12. Thus, claim 6 does not exclude arrangements where gate terminals face each other as disclosed in Joshi, because such gate terminals are formed on the same side of the transistor and are exposed along the same axis of the conductive clip, and as result, meet the recitations of “same orientation” recited in claim 6. Id.; Joshi, Fig. 8. 5 Appellant does not specifically address this position in the Reply Brief. Appeal 2019-006198 Application 15/389,974 18 In addition, we are not persuaded by Appellant’s arguments regarding Lu and Kusase largely for similar reasons expressed above with respect to Rejections 1 and 2. Similar to the discussion above, Appellant’s arguments do not take into consideration the combination of the prior art as a whole. See Ans. 13–14. Accordingly, we affirm the Examiner’s rejection of claims 6, 7, and 9 as obvious over Joshi, Lu, and Kusase. Rejection 4 Claims 11–14 and 17 all depend from independent claim 6. For the rejection of claims 11–14, and 17 over Joshi, Lu, Kusase, and Nishiura, Appellant relies on the arguments made with respect to claim 6 as pertaining to Rejection 3. Appeal Br. 18–19. Because we did not find these arguments persuasive as discussed above, we affirm the Examiner’s rejection of claims 11–14 and 17 for similar reasons as discussed above for Rejection 3. Rejection 5 Claims 15 and 16 depend from claim 6, and recite wherein each one of the first plurality of transistors or each one of the second plurality of transistors, respectively “is a vertical fin-based multi-gate transistor.” Appeal Br. 25. In rejecting claims 15 and 16 over Joshi, Lu, Kusase, Li’458, and LI’324, the Examiner found Joshi fails to disclose that the transistors are vertical fin-based multi-gate transistors. Non-Final Act. 21. The Examiner found Li’458 discloses packaged semiconductor devices including vertical field effect fin-based transistors wherein the package includes multiple dies Appeal 2019-006198 Application 15/389,974 19 on a printed circuit board (Li’458 Figs. 1–9, ¶¶ 23–31, 57, 82–84) and LI’324 discloses forming optimized vertical fin-type tunnel field effect transistors (TFET) with a plurality of gate elements (LI’324, Figs. 1–3, ¶¶ 25–68). Id. at 21–22. The Examiner determined it would have been obvious to further modify the system of Joshi, Lu, and Kusase by forming a packaged semiconductor device including vertical field effect fin-based transistors as taught by Li’458 or LI’324 in order to provide a packaged semiconductor device having a smaller size using vertical fin-type TFETs that enable current flow as a result of band-to-band tunneling and to provide a plurality of gate elements with adjustable width to manage an amount of saturation current supported by vertical fin-type TFET, and to optimize integration of vertical fin-type TFETs to increase TFET drivability and increasing the effective width of the TFET to improve the TFET performance. Id. at 22. Appellant contends the Examiner has failed to establish Li’458 discloses a “multi-gate transistor” as recited in claims 15 and 16. Appeal Br. 19. Appellant additionally contends the Examiner has not provided a sufficient reason to modify Joshi with Li’458, because the Examiner did not provide articulated reasoning with rational underpinning. Id. at 19–20. We are not persuaded by Appellant’s arguments. Although Appellant contends Li’458 discloses a vertical TFET device including a first vertical fin-type TFET 110 and a second vertical fin-type TFET 120 that is separated by shallow trench isolation 108 as support for the position that Li’458 does not disclose multi-gate transistors (Appeal Br. 19, see Li’458 ¶ 24, Fig. 1), the Examiner’s position is that Li’458 discloses multiple dies on a printed circuit board and LI’324 discloses optimized vertical fin-type TFET with a Appeal 2019-006198 Application 15/389,974 20 plurality of gate elements. Ans. 15–16. Appellant does not address the Examiner’s specific findings with respect to Li’458 or sufficiently explain why the presence of a trench in Li’458 means that the vertical fin-type TFETs in Li’458 are not multi-gate transistors, nor does Appellant appear to address the Examiner’s findings with respect to LI’324. As to Appellant’s arguments that the Examiner has not provided sufficient rationale to combine Li’458 or LI’324 with Joshi, Appellant provides only general assertions in this regard and does not address the Examiner’s specific rationale as discussed above. See Ans. 16. Accordingly, we are not persuaded by Appellant’s arguments. As a result, we affirm the Examiner’s rejection of claims 15 and 16. DECISION SUMMARY In summary: Claims Rejected 35 U.S.C. § Reference(s)/Basis Affirmed Reversed 1–4 103 Standing, Kusase 1–4 6, 7 103 Standing, Lu, Kusase 6, 7 6, 7, 9 103 Joshi, Lu, Kusase 6, 7, 9 11–14, 17 103 Joshi, Lu, Kusase, Nishiura 11–14, 17 15, 16 103 Joshi, Lu, Kusase, Li’458, LI’324 15, 16 Overall Outcome 1–4, 6, 7, 9, 11–17 Appeal 2019-006198 Application 15/389,974 21 TIME PERIOD FOR RESPONSE No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a). See 37 C.F.R. § 1.136(a)(1)(iv). AFFIRMED Copy with citationCopy as parenthetical citation