Ex Parte Hyndman et alDownload PDFPatent Trial and Appeal BoardOct 28, 201613397779 (P.T.A.B. Oct. 28, 2016) Copy Citation UNITED STA TES p A TENT AND TRADEMARK OFFICE APPLICATION NO. FILING DATE 13/397,779 02/16/2012 20987 7590 11/01/2016 VOLENTINE & WHITT PLLC ONE FREEDOM SQUARE 11951 FREEDOM DRIVE, SUITE 1300 RESTON, VA 20190 FIRST NAMED INVENTOR RHONDA HYNDMAN UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O. Box 1450 Alexandria, Virginia 22313-1450 www .uspto.gov ATTORNEY DOCKET NO. CONFIRMATION NO. WLJ.188 6711 EXAMINER ABRAHAM, IBRAHIME A ART UNIT PAPER NUMBER 1756 NOTIFICATION DATE DELIVERY MODE 11/01/2016 ELECTRONIC Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the following e-mail address( es): cjohnson@volentine.com aloomis@volentine.com iplaw@volentine.com PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE BEFORE THE PATENT TRIAL AND APPEAL BOARD Ex parte RHONDA HYNDMAN and STEPHEN BURGESS Appeal2015-002127 Application 13/397,779 Technology Center 1700 Before MICHAEL P. COLAIANNI, JULIA HEANEY, and JEFFREY R. SNAY, Administrative Patent Judges. SNAY, Administrative Patent Judge. DECISION ON APPEAL 1 Appellants2 appeal under 35 U.S.C. § 134(a) from the Examiner's decision rejecting claims 1-19.3 We have jurisdiction under 35 U.S.C. § 6(b ). We affirm-in-part. 1 We cite to the Specification ("Spec.") filed Feb. 16, 2012; Final Office Action ("Final Act.") mailed Jan. 28, 2014; Examiner's Answer ("Ans."); and Appellants' Appeal Brief ("App. Br.") and Reply Brief ("Reply Br."). 2 Appellants identify SPTS Technologies Limited as the real party in interest. App. Br. 3. 3 We adopt the Examiner's informal renumbering of Appellants' second- listed claim number 18 as claim 19. See Final Act. 2-3. Appeal2015-002127 Application 13/397,779 BACKGROUND The subject matter on appeal concerns deposition of aluminum layers or films on a substrate. Spec. i-f 1. According to Appellants, substrates such as wafers are "subject to considerable warpage or bowing when under the stress induced by the various deposited layers." Spec. i-f 3. While stress can be reduced "by sputtering the film at low temperature with the wafer clamped to a cooled electrostatic chuck," id. at i-f 6, the resulting aluminum layer "exhibits an unfavourable grain structure comprising a very small columnar grain separated by quite large voids," id. at i-f 7. Appellants purport to achieve improved grain structure and low tensile stress through a process in which a first deposition is performed with the substrate in an undamped state such that the wafer temperature increases as a result of the deposition process, followed by further deposition with the substrate clamped to an actively cooled support. Id. at 6-7. Sole independent claim 1 is illustrative and reproduced from the Claims Appendix of the Appeal Brief as follows: 1. A method of depositing a film on a substrate, comprising: placing the substrate on a support; depositing material comprising aluminum onto the substrate while the substrate is supported by but is undamped relative to the support and under a condition in which the temperature of the substrate increases, to thereby form a first metallic layer consisting of aluminum or an aluminum alloy on the substrate; and subsequently depositing material comprising aluminum directly onto the first layer to form a second metallic layer, consisting of aluminum or an aluminum alloy, continuously on the first layer, and 2 Appeal2015-002127 Application 13/397,779 wherein the depositing of the material to form the second layer is carried out while the substrate is supported by and clamped to a support and is actively cooled to a temperature of less than about 22 °C, and until the second layer is thicker than the first layer. REJECTIONS The Examiner maintained the following grounds of rejection: 4 I. Claims 1--4, 6, 8-12, 14, 15, 18, and 19 stand rejected under 35 U.S.C. § 103(a) as unpatentable over Felmetsger5 and Kailasam. 6 II. Claims 5 and 7 stand rejected under 35 U.S.C. § 103(a) as unpatentable over Felmetsger, Kailasam, and King. 7 III. Claim 13 stands rejected under 35 U.S.C. § 103(a) as unpatentable over Felmetsger, Kailasam, and Rich. 8 IV. Claims 16 and 17 stand rejected under 35 U.S.C. § 103(a) as unpatentable over Felmetsger, Kailasam, and Wang.9 V. Claim 17 also stands rejection under 35 U.S.C. § 112, second paragraph. 4 Final Act. 12-20; Ans. 2-10. Additional grounds of rejection under 35 U.S.C. § 112 were withdrawn. Ans. 10. 5 US 2009/0246385 Al, published Oct. 1, 2009 ("Felmetsger"). 6 US 7, 781,327 B 1, issued Aug. 24, 2010 ("Kailasam"). 7 US 5,080,455, issued Jan. 14, 1992 ("King"). 8 US 2004/015748 Al, published Aug. 12, 2004 ("Rich"). 9 Wang, I., Thin Film Stresses in TiW/AlCuSi/TiW Sandwich Structures, 130 Mat. Res. Soc. Symp. Proc., 1989, pp. 341-5 ("Wang"). 3 Appeal2015-002127 Application 13/397,779 DISCUSSION I With regard to Rejection I, Appellants argue that neither Felmetsger nor Kailasam teaches active cooling only during the second deposition step, as recited in claim 1. App. Br. 31; Reply Br. 3. We agree. Claim 1 requires a first deposition step during which "the temperature of the substrate increases," and a subsequent deposition step during which the substrate is "actively cooled to a temperature of less than about 22°C." The Examiner found that Felmetsger discloses depositing an aluminum film by a two-step process in which a first aluminum layer is deposited on the substrate, after which a second, thicker aluminum layer is deposited on the first. Final Act. 14. The Examiner also found that Felmetsger "teaches the films are deposited at ambient temperature." Id. Based on that teaching in Felmetsger, the Examiner found that one of ordinary skill would have had a reason to "actively cool the substrate in order to maintain the desired ambient temperature as sputtering alone would raise the deposition [sic, substrate] temperature." Id. at 17. Appellants argue (see App. Br. 25, 31; Reply Br. 3--4) even if Felmetsger's teaching of sputtering at ambient temperature were sufficient to suggest use of active cooling to offset deposition-induced heating, the Examiner has not articulated a reason why one of ordinary skill would have applied such cooling only during deposition of the second layer, while permitting substrate temperature to increase during deposition of the first layer. Nor does the Examiner identify any teaching in Felmetsger or Kailasam which would support such a finding. 4 Appeal2015-002127 Application 13/397,779 On this record and for the foregoing reasons, we cannot sustain Rejection I. II-IV Because each of Rejections II-IV is premised on the same erroneous finding as Rejection I, we will not sustain these Rejections for the same reasons given above in connection with Rejection I. v Claim 1 7 recites that the aluminum alloy identified in claim 16 "is Al- Cu-Si( <5%)." The Examiner found this recitation indefinite because "[i]t is unclear if% is being defined as wt% or at%." 1° Final Act. 13. Appellants do not dispute the Examiner's finding that it was known at least with regard to phase diagrams to report alloy compositions in either wt% or at%. App. Br. 23 ("That may be the case as concerns the phase diagrams ... '} Appellants also do not dispute the Examiner's finding that "[t]he numerical value of <5% would have a different numerical interpretation depending on whether it is wt% or at%." Compare Ans. 3 with Reply Br. 1-8. Rather, Appellants contend that the use of% alone to refer to weight % "is simply common practice and common notation." App. Br. 23. However, Appellants do not point us to persuasive evidence in support of their contention that use of% alone would be understood to refer to weight percent. On this record, we are persuaded that a preponderance of evidence 10 The abbreviations, wt% and at%, refer to weight percent and atomic percent, respectively. Ans. 2. 5 Appeal2015-002127 Application 13/397,779 of record supports the Examiner's finding that claim 17 is indefinite. Accordingly, we sustain Rejection V. DECISION The Examiner's decision rejecting claims 1-19 under 35 U.S.C. § 103(a) is reversed. The Examiner's decision rejecting claim 17 under 35 U.S.C. § 112, second paragraph, is affirmed. No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136. AFFIRMED-IN-PART 6 Copy with citationCopy as parenthetical citation